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| 2N2484 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2484J) * JANTX level (2N2484JX) * JANTXV level (2N2484JV) * JANS level (2N2484JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose * Low power * NPN silicon transistor Features * * * * Hermetically sealed TO-18 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/376 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Rating 60 60 6 50 360 2.06 325 -65 to +200 -65 to +200 Unit Volts Volts Volts mA mW mW/C C/W C C RJA TJ TSTG Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N2484 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO ICES IEBO1 IEBO2 Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE7 VBE VCEsat1 Symbol |hFE|1 |hFE|2 hFE COBO CIBO Test Conditions IC = 10 mA VCB = 60 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150C VCE = 5 Volts VCE = 45 Volts VEB = 6 Volts VEB = 5 Volts Test Conditions IC = 1 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 500 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, 100 A IC = 1 mA, IB = 100 A Test Conditions VCE = 5 Volts, IC = 50 A, f = 5 MHz VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 5 Volts, IC = 10 A, Rg = 10 k, 10Hz < Noise BW <15.7kHz VCB = 5V, IC = 1mA, f = 1kHz Min 60 Typ Max 10 5 10 2 5 10 2 Units Volts A nA A nA nA A nA Units Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Min 45 200 225 250 250 225 35 0.5 Typ Max 500 675 800 800 800 DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance 0.7 0.3 Typ Max Volts Volts Units Min 3 2 250 7 900 5 6 pF pF Noise Figure NF1 NF2 NF3 NF4 hie hoe hre 7.5 3 2 3 24 40 8x10-4 dB Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit Rev Volt Transfer Ratio Copyright 2002 Rev. F dB k mhos 3.5 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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